Preparation and Characterization of Eu-Doped Diamond Samples by Atom Probe Tomography

Practical quantum technologies built from wide band gap semiconductors, in particular diamond and silicon carbide, have become realistic thanks to careful defect engineering of these materials. Color centers, created by point defect dopant atoms, such as silicon and nitrogen, are the basis for nanomagnetomers that can sense and measure the state of a single nuclear spin and provide a platform for the entanglement of macroscopically separated spin states. The advancement of diamond quantum technologies will require better analytical techniques to probe the distribution of dopant atoms in these materials. To achieve optical addressing of individual spins, the dopant levels in the materials must be quite low, consequently traditional nano-analytical techniques such as STEM-EELS and STEM-EDS cannot provide the required chemical sensitivity to understand dopant distributions in these materials.